TSUS4400 www.vishay.com vishay semiconductors rev. 1.8, 01-aug-14 1 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 infrared emitting diode, 950 nm, gaas description TSUS4400 is an infrared, 950 nm emitting diode in gaas technology molded in a blue tinted plastic package. features ? package type: leaded ? package form: t-1 ? dimensions (in mm): ? 3 ? peak wavelength: p = 950 nm ? high reliability ? angle of half intensity: ? = 18 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? infrared remote control and free air transmission systems with low forward voltage and small package requirements ? emitter in transmissive sensors ? emitter in reflective sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8636 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSUS4400 15 18 950 800 ordering information ordering code packaging remarks package form TSUS4400 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2a power di ssipation p v 170 mw junction temperature t j 100 c operating temperature range t amb -40 to + 85 c storage temperature range t stg -40 to +100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j- std-051, leads 7 mm, soldered on pcb r thja 300 k/w
TSUS4400 www.vishay.com vishay semiconductors rev. 1.8, 01-aug-14 2 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21315 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 300 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t amb - ambient temperature (c) 21316 i f - forward current (ma) r thja = 300 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v i f = 1.5 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 100 ma tk vf -1.3 mv/k reverse current v r = 5 v i r 100 a breakdown voltage i r = 100 a v (br) 540 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf radiant intensity i f = 100 ma, t p = 20 ms i e 71535mw/sr i f = 1.5 a, t p = 100 s i e 140 mw/sr radiant power i f = 100 ma, t p = 20 ms e 20 mw temperature coefficient of e i f = 20 ma tk e -0.8 %/k angle of half intensity ? 18 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns i f = 1.5 a t r 400 ns fall time i f = 100 ma t f 800 ns i f = 1.5 a t f 400 ns virtual source diameter d 2.1 mm
TSUS4400 www.vishay.com vishay semiconductors rev. 1.8, 01-aug-14 3 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intens ity/power vs. ambient temperature t p - pulse duration (ms) 94 7947 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t = 0.01, i fm =2a 0.05 0.1 0.5 0.02 0.2 i - forward current (a) f 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i - forward current (ma) f 4 3 2 1 0 v f - forward voltage (v) 0.7 0.8 0.9 1.0 1.1 1.2 v f rel - relative forward voltage (v) 94 7990 t amb - ambient temperature (c) 100 80 60 40 20 0 i f = 10 ma i f - forward current (ma) 94 7982 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i - radiant intensity (mw/sr) e - radiant power (mw) e i f - forward current (ma) 94 7980 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t amb - ambient temperature (c)
TSUS4400 www.vishay.com vishay semiconductors rev. 1.8, 01-aug-14 4 document number: 81054 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - relative radiant power vs . wavelength fig. 10 - relative radi ant intensity vs. angular displacement package dimensions in millimeters 900 950 0 0.25 0.5 0.75 1.0 1.25 - wavelength (nm) 1000 94 7994 e rel - relative radiant power i f = 100 ma 0.4 0.2 0 0.2 0.4 i - relative radiant intensity e rel 0.6 94 7983 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 technical drawing s according to din s pecification s drawing-no.: 6.544-5255.01-4 i ss ue: 9; 28.07.14 ? 3.2 0.15 ac ? 2.9 0.15 0.4 + 0.15 - 0.05 area not plane r1.4 ( s phere) < 0.6 3.4 0.15 4.4 0.3 5.8 0.3 34.4 0.5 1.5 0.5 2.54 nom. (2.5) 0.5 + 0.2 - 0.1
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